Title :
Recent Advances in Bulk Semiconductor Microwave Devices in Japan
Abstract :
Recent achievements and state-of-the-art in the bulk semiconductor microwave devices in Japan will be described. The discussions will be limited to GaAs Gunn oscillators unless otherwise stated. Devices other than Gunn oscillators will be discussed in the final section.
Keywords :
Doping; Electrical resistance measurement; Fabrication; Frequency; Gallium arsenide; Gunn devices; Microwave devices; Microwave oscillators; National electric code; Noise measurement;
Conference_Titel :
Microwave Symposium Digest, 1967 G-MTT International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/GMTT.1967.1122624