DocumentCode :
2627859
Title :
The Capabilities and State of the Art of Gunn and LSA Devices
Author :
Eastman, Lester F.
fYear :
1969
fDate :
5-7 May 1969
Firstpage :
163
Lastpage :
169
Abstract :
Ridley and Watkins conceived of the idea that electrons in solids could be forced to undergo a change in energy and mass that would lead to bulk negative resistance. Hilsum later developed the idea as it applied to Gallium Arsenide with high electric fields applied. Ridley subsequently pointed out the natural tendency of such bulk negative resistance devices to form high-field, traveling domains. Quite independently from the development of these analytical concepts, Gunn experimentally discovered microwave transit-time oscillations in Gallium Arsenide subjected to high electric fields.
Keywords :
Effective mass; Electric resistance; Electron mobility; Frequency; Gallium arsenide; Gunn devices; Microwave devices; PROM; Solids; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 1969 G-MTT International
Conference_Location :
Dallas TX, USA
Type :
conf
DOI :
10.1109/GMTT.1969.1122679
Filename :
1122679
Link To Document :
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