DocumentCode
2628895
Title
200 Watt Solid State UHF Amplifier
Author
Staiman, David ; Breese, Maurice
fYear
1969
fDate
5-7 May 1969
Firstpage
445
Lastpage
449
Abstract
A high power transistor amplifier with an output of 200 W peak at a center frequency of 432 MHz is described. Eight TRW 2N5177 transistors are operated in parallel by means of a network of split-tee hybrid junctions as shown in Figure 1. The individual amplifier circuits, as well as the hybrid junction network, are etched microstrip circuits on high purity alumina substrates.
Keywords
Bandwidth; Etching; Gold; Hybrid junctions; Impedance; Integrated circuit interconnections; Power amplifiers; Pulse amplifiers; Pulse measurements; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1969 G-MTT International
Conference_Location
Dallas TX, USA
Type
conf
DOI
10.1109/GMTT.1969.1122735
Filename
1122735
Link To Document