DocumentCode :
2628935
Title :
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material
Author :
Zappettini, Andrea ; Zha, Mingzheng ; Marchini, Laura ; Calestani, Davide ; Mosca, Roberto ; Gombia, Enos ; Zanotti, Lucio ; Zanichelli, Massimiliano ; Pavesi, Maura ; Auricchio, Natalia ; Caroli, Ezio
Author_Institution :
IMEM-CNR, Parma, 43100 Italy
fYear :
2008
fDate :
19-25 Oct. 2008
Firstpage :
118
Lastpage :
121
Abstract :
CdZnTe crystals doped with indium were grown by the boron oxide vertical Bridgman technique, with a diameter of 2-inches. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic characteristics.
Keywords :
Boron; Conductivity; Crystalline materials; Crystallization; Crystals; Etching; Impurities; Indium; Spectroscopy; X-ray detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
ISSN :
1095-7863
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2008.4775136
Filename :
4775136
Link To Document :
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