Title :
Use of a transistor array to predict infant transistor mortality rate in InGaP/GaAs heterojunction bipolar transistor technology
Author :
Alt, K.W. ; Shirley, T.E. ; Hutchinson, C.P. ; Iwamoto, M. ; Yeats, R.E. ; Gierhart, B.C. ; Bonse, M. ; Shimon, R.L. ; Kellert, F.G. ; D´Avanzo, D.C.
Author_Institution :
Agilent Technologies, Inc., Santa Rosa, CA 95403
Abstract :
A novel circuit for measuring current gain, β on wafer for a very large number of individual transistors in InGaP/GaAs HBT Technology is presented. The circuit allows for accurately measuring β for as many as 25,000 individual transistors on a single wafer. The circuit gives good predictive capability of the infant failure rate of a given wafer without running a costly, time consuming reliability test or burn-in screen.
Keywords :
Bipolar transistor circuits; Circuit testing; Current measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Resistors; Size measurement; Stress measurement; Time measurement;
Conference_Titel :
ROCS Workshop, 2008 [Reliability of Compound Semiconductors Workshop]
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7908-0120-5
DOI :
10.1109/ROCS.2008.5483621