Title :
Band gap engineering of gallium nitride surface quantum wells
Author :
Zhang, X. ; Cai, A. ; Fothergill, D. ; Muth, J.F. ; Roberts, J.C. ; Rajagopal, P. ; Cook, J.W., Jr. ; Finer, E.L. ; Linthicum, K.J.
Author_Institution :
ECE Dept., North Carolina State Univ., Raleigh, NC, USA
Abstract :
A simple model of the surface quantum well including spontaneous polarization and piezoelectric effects from the wurtzite material is proposed, and how the energy of the ground state and efficiency of emission can be varied is suggested by controlling the thickness of the capping layer, the thickness of the AlGaN confining layer, and by controlling the fields within the device though doping, or by introducing screening charge from an external excitation source such as a laser. A 1D Poisson solver is used to model the band structure, and Schrodinger´s equation is solved numerically to find the bound states of the surface quantum well.
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; band structure; bound states; gallium compounds; ground states; piezoelectricity; semiconductor quantum wells; wide band gap semiconductors; 1D Poisson solver; AlGaN confining layer; GaN; Schrodinger equation; band gap engineering; band structure; bound states; capping layer; gallium nitride surface quantum wells; ground state energy; piezoelectric effect; polarization effect; wurtzite material; Gallium nitride; III-V semiconductor materials; Optical control; Photonic band gap; Piezoelectric effect; Piezoelectric materials; Piezoelectric polarization; Power engineering and energy; Surface emitting lasers; Thickness control;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1547852
