DocumentCode :
2631057
Title :
High-speed GaAs MESFET digital IC design for optical communication systems
Author :
Sano, Kimikazu ; Narahara, Koichi ; Murata, Koichi ; Otsuji, Taiichi ; Onodera, Kiyomitsu
Author_Institution :
NTT Opt. Network Syst. Lab., Kanagawa, Japan
fYear :
1998
fDate :
10-13 Feb 1998
Firstpage :
1
Lastpage :
5
Abstract :
This paper describes a high-speed GaAs MESFET digital IC design for optical communication systems. We propose novel circuit configurations of a selector and a static delayed flip-flop which are key elements to perform high-speed digital functions. Employing these new design, the selector IC and static decision IC fabricated with 0.12-μm GaAs MESFET operated up to 44 Gbit./s and 22 Gbit/s, respectively. These performances are record speed for GaAs MESFETs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect digital integrated circuits; gallium arsenide; optical communication; 0.12 micron; 22 Gbit/s; 44 Gbit/s; circuit configurations; flip-flop; high-speed GaAs MESFET digital IC design; optical communication systems; Analog integrated circuits; Clocks; Digital integrated circuits; Frequency; Gallium arsenide; High speed integrated circuits; MESFET integrated circuits; Optical design; Optical fiber communication; Photonic integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference 1998. Proceedings of the ASP-DAC '98. Asia and South Pacific
Conference_Location :
Yokohama
Print_ISBN :
0-7803-4425-1
Type :
conf
DOI :
10.1109/ASPDAC.1998.669389
Filename :
669389
Link To Document :
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