A CMOS Bandgap Reference with Wide Input Voltage Range

Author

Yuan, Yang ; Zhenghua, Song ; Yong, Gao

Author_Institution

Electron. Eng. Dept., Xi´´an Univ. of Technol., Xi´´an, China

Volume

3

fYear

2009

fDate

March 31 2009-April 2 2009

Firstpage

364

Lastpage

368

Abstract

A novel bandgap reference based on CMOS technology is presented in this paper. The main feature of the circuit is the wide input voltage range. It consists of two stages based on voltage-connection, for the first stage an improved structure is adopted to provide the relative high output voltage and for the second stage an amplifier is used to ensure the high accuracy. The circuit is simulated with HSPICE using SMIC 0.35 mum mixed signal models, and the results show that it possesses a temperature coefficient(TC) of 3.82times10^-6 K^-1 with temperature range from -40degC to 85degC. Under a wide input voltage range from 5 V to 36 V, it possesses the power supply rejected characteristic of 0.209 mV/V and PSRR of 78 dB.

Keywords

CMOS integrated circuits; energy gap; CMOS bandgap reference; HSPICE; SMIC; size 0.35 mum; temperature -40 degC to 85 degC; voltage 5 V to 36 V; voltage connection; wide input voltage range; Bipolar transistors; Breakdown voltage; CMOS technology; Circuit simulation; Computer science; Digital integrated circuits; Integrated circuit technology; Mirrors; Photonic band gap; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Science and Information Engineering, 2009 WRI World Congress on

Conference_Location

Los Angeles, CA

Print_ISBN

978-0-7695-3507-4

Type

conf

DOI

10.1109/CSIE.2009.1087

Filename

5170864