Probing ultrafast carrier dynamics in semiconductor nanostructures with terahertz pulses

Author

Cooke, D.G. ; MacDonald, A.N. ; Hryciw, A. ; Meldrum, A. ; Hegmann, F.A. ; Mazur, Yu.I. ; Wen, H. ; Ma, W.Q. ; Wang, X. ; Wang, Z.M. ; Salamo, G.J. ; Xiao, M. ; Mishima, T.D. ; Lian, G.D. ; Keay, J. ; Johnson, M.B. ; Wang, J. ; Li, Q. ; Wu, Z.H. ; DeSouza

Author_Institution

Dept. of Phys., Alberta Univ., Edmonton, Alta., Canada

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

244

Lastpage

245

Abstract

We use time-resolved terahertz spectroscopy to probe ultrafast carrier dynamics in a variety of semiconductor nanostructures including InGaAs quantum dot chains and wires, GaAs nanowires, and Si nanoclusters embedded in glass.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; nanowires; semiconductor quantum dots; semiconductor quantum wires; silicon; submillimetre wave spectra; time resolved spectra; GaAs; GaAs nanowires; InGaAs; InGaAs quantum dot chains; Si; Si nanoclusters; SiO₂; glass; quantum dot wires; semiconductor nanostructures; terahertz pulses; time-resolved terahertz spectroscopy; ultrafast carrier dynamics; Gallium arsenide; Indium gallium arsenide; Nanowires; Optical pumping; Physics; Probes; Pulse measurements; Quantum dots; Semiconductor nanostructures; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1547970

Filename

1547970