DocumentCode
2632274
Title
Quantum-confined Stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates
Author
Kuo, Yu-Hsuan ; Lee, Yongkyu ; Ren, Shen ; Ge, Yangsi ; Miller, David A B ; Harris, James S.
Author_Institution
Stanford Univ., CA, USA
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
284
Lastpage
285
Abstract
We observe strong electroabsorption in Ge quantum wells with SiGe barriers, grown on Si substrates, with performance comparable to III-V materials, and promising compact, low-power, high-speed modulators compatible with Si CMOS electronics.
Keywords
Ge-Si alloys; electroabsorption; elemental semiconductors; germanium; integrated optoelectronics; quantum confined Stark effect; semiconductor quantum wells; Ge-SiGe; Ge/SiGe quantum wells; III-V materials; Si; Si CMOS electronics; SiGe barriers; compact modulators; electroabsorption; high-speed modulators; low-power modulators; quantum-confined Stark effect; silicon substrates; Absorption; Germanium silicon alloys; III-V semiconductor materials; Optical buffering; Optical modulation; Optical resonators; Optical waveguides; Silicon germanium; Stark effect; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1547990
Filename
1547990
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