SiC photodetectors for industrial applications

Author

Sandvik, Peter ; Burr, Kent ; Soloviev, Stanislav ; Arthur, Stephen ; Matocha, Kevin ; Kretchmer, James ; Lombardo, Leo ; Brown, Dale

Author_Institution

GE Global Res. Center, Niskayuna, NY, USA

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

319

Lastpage

320

Abstract

Silicon carbide is a wide bandgap semiconductor with highly robust properties lending its applicability to robust electronics and sensors. Ultraviolet detection in particular is of interest for several industrial applications including those requiring a rugged sensing device. SiC photodetectors and their applications will be discussed, including examples of device design, fabrication and testing. Also, the fabrication and testing of separate avalanche and multiplication region avalanche photodiodes will be highlighted.

Keywords

avalanche photodiodes; optical design techniques; optical fabrication; photodetectors; semiconductor device testing; silicon compounds; ultraviolet detectors; wide band gap semiconductors; SiC; SiC photodetectors; avalanche photodiodes; device design; device fabrication; device testing; ultraviolet detection; Avalanche photodiodes; Fabrication; Gallium nitride; Optical filters; Photodetectors; Robustness; Silicon carbide; Temperature sensors; Testing; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1547999

Filename

1547999