• DocumentCode
    2632472
  • Title

    High-speed germanium-on-insulator photodetectors

  • Author

    Dehlinger, G. ; Schaub, J.D. ; Koester, S.J. ; Ouyang, Q.C. ; Chu, J.O. ; Grill, A.

  • Author_Institution
    IBM TJ. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    321
  • Lastpage
    322
  • Abstract
    We will present recent results from our work on germanium-on-silicon photodetectors. We demonstrate that the devices display high bandwidth and efficiency at 850 nm, and could be suitable for future 40 Gb/sec optical interconnect applications.
  • Keywords
    elemental semiconductors; germanium; optical interconnections; photodetectors; semiconductor-insulator boundaries; 40 Gbit/s; 850 nm; Ge-SiO2; bandwidth; germanium-on-insulator photodetectors; optical interconnect; Absorption; Bandwidth; CMOS technology; Costs; Dark current; Detectors; Optical fiber devices; Optical interconnections; Photodetectors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548000
  • Filename
    1548000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2632472