DocumentCode
2632486
Title
(Al,Ga,In)N-based UV and VIS photodetectors
Author
Muñoz, Elias ; Pau, J.L. ; Rivera, C. ; Pereiro, J. ; Navarro, A. ; Pecharromán, R.
Author_Institution
ISOM, Univ. Politecnica de Madrid
fYear
2005
fDate
22-22 Oct. 2005
Firstpage
306
Lastpage
307
Abstract
Developments and some key problems in (Al,Ga,In)N-based UV and VIS photodetectors are briefly reviewed. Photodetectors´ response to high energy photons are described. Some applications of these photodetectors in biophotonics and combustion control are presented. It is concluded that the detectors´ performance are strongly linked to materials and processing progresses in such semiconductor alloys
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; photodetectors; ultraviolet detectors; wide band gap semiconductors; (Al,Ga,In)N-based UV photodetector; (Al,Ga,In)N-based VIS photodetector; (AlGaIn)N; energy photons; Aluminum gallium nitride; Filters; Gallium nitride; Photodetectors; Radiation detectors; Semiconductor materials; Semiconductor radiation detectors; Silicon radiation detectors; Solar power generation; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548001
Filename
1548001
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