DocumentCode
2632718
Title
1,550-nm uncooled EA-modulator and EA/DFB for 10/40-Gbit/s low-power-consumption transceivers
Author
Makino, S. ; Arimoto, H. ; Kitatani, T. ; Shinoda, K. ; Tsuchiya, T. ; Aoki, M. ; Sasada, N. ; Uchida, K. ; Naoe, K. ; Uomi, K.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo
fYear
2005
fDate
22-22 Oct. 2005
Firstpage
349
Lastpage
350
Abstract
New uncooled 1,550-nm InGaAlAs electroabsorption-modulators and their laser-integration technologies were developed for 10/40-Gbit/s small-form-factor modules. For the first time, 10-Gbit/s 40-km SMF transmission and 40-Gbit/s operation were achieved up to 85degC
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium compounds; indium compounds; optical communication equipment; optical fibre communication; transceivers; 10 Gbit/s; 1550 nm; 40 Gbit/s; 40 km; EA/DFB; InGaAlAs; InGaAlAs electroabsorption-modulators; laser-integration; small-form-factor modules; transceivers; uncooled EA-modulator; Chirp modulation; Conducting materials; Distributed feedback devices; Electrons; Laser feedback; Optical fiber communication; Optical materials; Temperature; Transceivers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548014
Filename
1548014
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