DocumentCode
2632826
Title
On driving SiC power JFETs
Author
Abuishmais, Ibrahim ; Basi, Supratim ; Undeland, Tore
Author_Institution
Electr. Power Dept., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
fYear
2010
fDate
6-8 Sept. 2010
Abstract
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper investigates the influence of the gate drive on the switching characteristics of the device and design strategies highlighted.
Keywords
junction gate field effect transistors; silicon compounds; SiC; gate drive; high temperature operation; power VJFET; switching characteristics; switching loss; voltage rating; Capacitance; Capacitors; Driver circuits; JFETs; Logic gates; Silicon carbide; Switches; Device characterization; JFET; SiC-device; new switching devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference (EPE/PEMC), 2010 14th International
Conference_Location
Ohrid
Print_ISBN
978-1-4244-7856-9
Type
conf
DOI
10.1109/EPEPEMC.2010.5606857
Filename
5606857
Link To Document