Novel approaches to THz sources and detectors at room temperature

Author

Ding, Yujie J.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2005

fDate

22-22 Oct. 2005

Firstpage

366

Abstract

The development of widely-tunable monochromatic THz sources is described. These sources are based on difference-frequency generation (DFG) in GaSe, ZnGeP₂, and GaP, respectively. Using a GaSe crystal the output wavelength was tuned in the range of from 58.2 mum to 3540 mum (from 172 cm^-1 to 2.82 cm^-1) with the peak power reaching 209 W. On the other hand, based on DFG in a ZnGeP₂ crystal the output wavelength was tuned in the ranges of 83.1-1642 mum and 80.2-1416 mum for two phase-matching configurations, respectively. The output power reached 134 W. Finally, using a GaP crystal the output wavelength was tuned in the range of 71.1-2830 mum whereas the highest peak power was 15.6 W

Keywords

III-VI semiconductors; gallium compounds; germanium compounds; optical frequency conversion; optical tuning; submillimetre wave detectors; ternary semiconductors; zinc compounds; 25 degC; GaP; GaP crystal; GaSe; GaSe crystal; THz detectors; THz sources; ZnGeP₂; ZnGeP₂ crystal; difference-frequency generation; phase-matching; wavelength tuning; Free electron lasers; Gases; Infrared detectors; Laser beams; Laser tuning; Optical pulse generation; Power generation; Pump lasers; Space vector pulse width modulation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548022

Filename

1548022