Title :
Novel approaches to THz sources and detectors at room temperature
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
The development of widely-tunable monochromatic THz sources is described. These sources are based on difference-frequency generation (DFG) in GaSe, ZnGeP2, and GaP, respectively. Using a GaSe crystal the output wavelength was tuned in the range of from 58.2 mum to 3540 mum (from 172 cm-1 to 2.82 cm-1) with the peak power reaching 209 W. On the other hand, based on DFG in a ZnGeP2 crystal the output wavelength was tuned in the ranges of 83.1-1642 mum and 80.2-1416 mum for two phase-matching configurations, respectively. The output power reached 134 W. Finally, using a GaP crystal the output wavelength was tuned in the range of 71.1-2830 mum whereas the highest peak power was 15.6 W
Keywords :
III-VI semiconductors; gallium compounds; germanium compounds; optical frequency conversion; optical tuning; submillimetre wave detectors; ternary semiconductors; zinc compounds; 25 degC; GaP; GaP crystal; GaSe; GaSe crystal; THz detectors; THz sources; ZnGeP2; ZnGeP2 crystal; difference-frequency generation; phase-matching; wavelength tuning; Free electron lasers; Gases; Infrared detectors; Laser beams; Laser tuning; Optical pulse generation; Power generation; Pump lasers; Space vector pulse width modulation; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548022
