CPI challenges to BEOL at 28nm node and beyond

Author

Ryan, Vivian ; Breuer, Dirk ; Geisler, Holm ; Kioussis, Dimitri ; Lehr, Matthias U. ; Paul, Jens ; Machani, Kashi ; Shah, Chirag ; Kosgalwies, Sven ; Lehmann, Lothar ; Lee, Jaesik ; Kuechenmeister, Frank ; Ryan, E. Todd ; Karimanal, Kamal

Author_Institution

GLOBALFOUNDRIES Inc., Albany, NY, USA

fYear

2012

fDate

15-19 April 2012

Abstract

We address package-induced degradation of BEOL interconnects and approaches for recovery. For dielectrics, we cover process options and position in stack for ULK films and how these lead to differences in strength. Experiments were designed to cross-compare multiple methods to test susceptibility of BEOL interconnect to CPI damage. We also address how Chip Package Interaction changes as BEOL features and layout evolve.

Keywords

dielectric materials; integrated circuit interconnections; integrated circuit layout; integrated circuit packaging; BEOL interconnects; BEOL layout; CPI damage; ULK films; chip package interaction; cross-compare multiple method; dielectrics; package-induced degradation; process option; size 28 nm; Acceleration; Assembly; Films; Integrated circuit interconnections; Layout; Metals; Stress; ULK; chip; low-k; package; white bump;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241788

Filename

6241788

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2633296