• DocumentCode
    2633347
  • Title

    Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 μm quantum dot lasers

  • Author

    Marko, I.P. ; Masse, N. ; Sweeney, S.J. ; Adams, A.R. ; Sellers, I.R. ; Mowbray, D.J. ; Skolnick, M.S. ; Liu, H.Y. ; Groom, K.M.

  • Author_Institution
    Adv. Technol. Inst., Surrey Univ., UK
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    402
  • Lastpage
    403
  • Abstract
    Gain saturation increases the radiative component, Jrad, of the threshold current density, Jth, and its contribution to the thermal sensitivity of Jth in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical saturation; quantum dot lasers; thermo-optical effects; 1.3 mum; InAs-GaAs; InAs/GaAs lasers; gain saturation; low QD density devices; nonradiative recombination; quantum dot lasers; radiative component; short cavity devices; thermal characteristics; thermal sensitivity; threshold current density; Density measurement; Gallium arsenide; Land surface temperature; Quantum dot lasers; Quantum well lasers; Radiative recombination; Space technology; Temperature sensors; Thermal engineering; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548048
  • Filename
    1548048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2633347