An X-Band Paramp with 0.85 dB Noise Figure (uncooled) and 500 MHz Bandwidth

Author

Dickens, Lawrence E.

Author_Institution

Westinghouse Defense & Electron. Syst. Center, Baltimore, MD, USA

fYear

1972

fDate

22-24 May 1972

Firstpage

55

Lastpage

57

Abstract

This paper describes the results of a development program which had two primary objectives: (1) the development of planar, passivated varactor chip diodes with a zero bias frequency cutoff of greater than 600 GHz, and (2) the employment of these chips in an uncooled, X-band Paramp System having a noise temperature of 60°K. GaAs Schottky barrier varactors with a cutoff frequency of 800 GHz have been used in a balanced diode type of parametric amplifier operating with a signal frequency at 7.6 GHz. The parameters of the overall amplifier operating at room temperature are: Gain of 15 dB, Bandwidth of 500 MHz, and an excess noise temperature of 62°K (a noise figure of 0.85 dB).

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; microwave parametric amplifiers; varactors; GaAs; Schottky barrier varactors; X-band paramp; balanced diode; bandwidth 500 MHz; development program; frequency 7.6 GHz; frequency 800 GHz; gain 15 dB; noise figure; noise figure 0.85 dB; planar passivated varactor chip diodes; temperature 60 K; temperature 62 K; zero bias frequency cutoff; Acoustical engineering; Bandwidth; Cutoff frequency; Employment; Gallium arsenide; Noise figure; Schottky barriers; Schottky diodes; Temperature; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 1972 IEEE GMTT International

Conference_Location

Arlington Heights, IL

Type

conf

DOI

10.1109/GMTT.1972.1122991

Filename

1122991