Title :
28nm node bulk vs FDSOI reliability comparison
Author :
Federspiel, X. ; Angot, D. ; Rafik, M. ; Cacho, F. ; Bajolet, A. ; Planes, N. ; Roy, D. ; Haond, M. ; Arnaud, F.
Author_Institution :
Crolles R&D Center, STMicroelectroni, Crolles, France
Abstract :
In this paper, we present TDDB, HCI and BTI reliability characterization of Nfet and Pfet devices issued from FDSOI and bulk 28nm technologies. 28nm FDSOI devices achieve 32% improved performance, 40% reduced power consumption and improved matching. From device level tests, 28nm FDSOI also demonstrates intrinsic reliability behavior similar to 28 bulk devices, giving confidence in the robustness of this technology.
Keywords :
field effect transistors; semiconductor device reliability; silicon-on-insulator; BTI; FDSOI; HCI; NFET devices; PFET devices; TDDB; fully depleted silicon-on-insulator; reliability; Degradation; Human computer interaction; Performance evaluation; Reliability; Stress; Stress measurement; Voltage measurement; CMOS; FDSOI; Reliability; hot-carrier;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241805
