Design Considerations of a 3.1 - 3.5 GHz GaAs FET Feedback Amplifier

Author

Besser, Les

Author_Institution

Fairchild Microwave & Optoelectron., Palo Alto, CA, USA

fYear

1972

fDate

22-24 May 1972

Firstpage

230

Lastpage

232

Abstract

Recent GaAs FET devices have exhibited promising capabilities for microwave amplification. Circuit designers, however, found two problems with the FET applications, namely, the characteristically high input/output impedances are difficult to match into a 5Ω system and the potential instabilities that exists at frequencies below 4 GHz. This paper describes development work done on feedback circuits in designing an unconditionally stable FET amplifier in the 3.1-3.5 GHz frequency range by using conventional microstrip techniques, and also investigates the effect of feedback components on noise and output capabilities.

Keywords

III-V semiconductors; feedback amplifiers; gallium arsenide; microstrip circuits; microwave amplifiers; microwave field effect transistors; network synthesis; FET feedback amplifier; GaAs; feedback circuits; feedback components; frequency 3.1 GHz to 3.5 GHz; microstrip technique; microwave amplification; stable FET amplifier; Bipolar transistors; Feedback amplifiers; Feedback circuits; Frequency; Gallium arsenide; Impedance; Microwave FETs; Microwave amplifiers; Microwave devices; Output feedback;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 1972 IEEE GMTT International

Conference_Location

Arlington Heights, IL

Type

conf

DOI

10.1109/GMTT.1972.1123056

Filename

1123056