• DocumentCode
    2634827
  • Title

    Single and Dual Gate GaAs FET Integrated Amplifiers in C Band

  • Author

    Arnold, S.

  • Author_Institution
    Plessey Avionics & Commun. Res. Lab., Romsey, UK
  • fYear
    1972
  • fDate
    22-24 May 1972
  • Firstpage
    233
  • Lastpage
    234
  • Abstract
    This paper outlines some aspects of the device characterisation, circuit design and realisation of hybrid integrated amplifiers in C Band. The performance of designs at 5 GHz employing single and dual-gate GaAs FETs are presented.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave amplifiers; C band; dual gate FET integrated amplifiers; frequency 5 GHz to 5.25 GHz; gain 20 dB; hybrid integrated amplifiers; single gate FET integrated amplifiers; Bonding; Capacitors; Ceramics; Circuit synthesis; Circuit topology; FETs; Gallium arsenide; Impedance; Noise figure; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 1972 IEEE GMTT International
  • Conference_Location
    Arlington Heights, IL
  • Type

    conf

  • DOI
    10.1109/GMTT.1972.1123057
  • Filename
    1123057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2634827