• DocumentCode
    2634834
  • Title

    Practical implications of chip-level statistical electromigration

  • Author

    Schmitz, Anthony

  • Author_Institution
    Logic Technol. Dev. Quality & Reliability, Intel Corp., Hillsboro, OR, USA
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    The accurate setting of electromigration (EM) design guidelines early is necessary to achieve chip-level fail goals. The issue is even more critical with the recognition of the percentage fail as a stochastic issue based on the individual EM elements. The challenge is the degree to fix those elements prior to the knowledge of chip-level fail rate. This paper will demonstrate a test case and approaches to early design guidelines which have shown success at meeting chip-level EM fail goals.
  • Keywords
    electromigration; failure analysis; statistical analysis; stochastic processes; EM design guidelines; chip-level fail goals; chip-level statistical electromigration; early design guidelines; individual EM elements; stochastic issue; test case; Current density; Electromigration; Guidelines; Junctions; Reliability engineering; Temperature sensors; Electromigration; chip-level; copper interconnects; statistical budgeting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241867
  • Filename
    6241867