DocumentCode
2634875
Title
Nonlinear optical devices in silicon
Author
Jalali, B. ; Boyraz, O. ; Koonath, P. ; Raghunathan, V. ; Dimitropoulos, D. ; Indukuri, T.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA
fYear
2005
fDate
22-22 Oct. 2005
Firstpage
561
Lastpage
562
Abstract
Nonlinear optical devices, with silicon-on-insulator material system as platform for their fabrication are discussed. Third order nonlinearity in silicon offers active functionalities in silicon by taking advantage of the high index contrast and tight beam confinement. Among the third order effects; Raman, Kerr nonlinearity, two-photon absorption are particularly strong
Keywords
Raman spectra; optical Kerr effect; optical materials; silicon-on-insulator; two-photon processes; Kerr nonlinearity; Raman effect; silicon-on-insulator material system; third order nonlinearity; two-photon absorption; Nonlinear optical devices; Optical modulation; Optical refraction; Optical waveguides; Raman scattering; Scanning probe microscopy; Semiconductor waveguides; Silicon; Supercontinuum generation; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548128
Filename
1548128
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