The design of a 310–350-GHz sub-harmonic mixer with planar schottky diodes

Author

Zhang, Bo ; Fan, Yong ; Yang, X.F. ; Zhong, F.Q. ; Chen, Zhe ; Zhang, S.X. ; Lin, X.Q. ; Song, K.J.

Author_Institution

EHF Key Lab. of Fundamental Sci., Universtity of Electron. Sci. & Technol. of China., Chengdu, China

Volume

2

fYear

2010

fDate

17-20 Sept. 2010

Firstpage

1

Lastpage

3

Abstract

This paper presents the design and simulation of a novel fixed-tuned 310-350-GHz wide-band sub-harmonic mixer. The mixer is based on an anti-parallel pair of GaAs Schottky diodes fabricated at European company. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. A best double-sideband-mixer loss of 5.7 dB was achieved with 5 mW of LO power at 332 GHz. Over an RF band of 310-350 GHz, the double-sideband loss is below 11 dB. This state-of-the-art optimization is attributed to lower parasitic devices and a low-loss waveguide circuit.

Keywords

III-V semiconductors; Schottky diode mixers; flip-chip devices; gallium arsenide; submillimetre wave diodes; submillimetre wave filters; submillimetre wave mixers; waveguide components; GaAs; RF-IF filter; double-sideband-mixer loss; fixed tuned wideband subharmonic mixer design; frequency 310 GHz to 350 GHz; loss 5.7 dB; low-loss waveguide circuit; parasitic devices; planar Schottky diodes; power 5 mW; suspended quartz-based substrate; GaAs schottky diodes; sub-harmonic mixer; suspended quartz microstrip; terahertz wave circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals Systems and Electronics (ISSSE), 2010 International Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6352-7

Type

conf

DOI

10.1109/ISSSE.2010.5606977

Filename

5606977