Title :
Effective line length of test structure and its effect of area scaling on TDDB characterization in advanced Cu/ULK process
Author :
Jeong, Tae-Young ; Choi, Seung Man ; Baek, Dong Cheon ; Windu, Sari ; Lee, Miji ; Park, Jongwoo
Author_Institution :
Technol. Quality & Reliability, Quality & Reliability Team, Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
This study focuses on the cause of deviation of Poisson area scaling trend used for IMD-TDDB reliability of Cu/ULK (k=2.55) process. The effects of test structure, such as the serpent-comb and comb-comb structure, on IMD-TDDB reliability are comprehensively investigated with a simple resistance model to illustrate voltage drop and effective length of metal line. Since effective line length of the serpentine-comb decreases with increasing voltage so as to misread lifetime prediction, care must be taken in the selection of test structure and bias condition for advanced BEOL process development with ULK and its reliability qualification.
Keywords :
copper; dielectric materials; electric breakdown; electric resistance; integrated circuit reliability; integrated circuit testing; metals; stochastic processes; BEOL process development; Cu; IMD-TDDB reliability; Poisson area scaling trend; TDDB characterization; ULK process; comb-comb structure; inter-metal dielectric time dependent dielectric breakdown; lifetime prediction; line length; metal line; reliability qualification; resistance model; serpent-comb structure; serpentine-comb; test structure; voltage drop; Computer aided software engineering; Dielectrics; Leakage current; Metals; Reliability; Resistance; Stress; IMD TDDB; area scaling; effective line length;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241877
