Title :
Total ionizing dose effects on ultra thin buried oxide floating body memories
Author :
Mahatme, N.N. ; Schrimpf, R.D. ; Reed, R.A. ; Bhuva, B.L. ; Griffoni, A. ; Simoen, E. ; Aoulaiche, M. ; Linten, D. ; Jurczak, M. ; Groeseneken, G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
The total-ionizing-dose response of 1-transistor floating body memory cells is investigated. Factors affecting the robustness of these novel devices for high reliability applications in space environments are investigated. Memory failure is shown to result from radiation-induced threshold voltage shifts and increased leakage. Results from this work can also be used to uncover the effects of process and transistor level degradation on memory performance.
Keywords :
MOSFET; integrated circuit reliability; radiation hardening (electronics); random-access storage; 1-transistor floating body memory cells; memory failure; radiation-induced threshold voltage shifts; reliability applications; space environments; total-ionizing dose effects; transistor level degradation; ultrathin buried oxide floating body memories; Charge carrier processes; Couplings; Logic gates; Radiation effects; Silicon; Threshold voltage; Time measurement; Floating Body Random Access Memory (FBRAM); Total ionizing dose (TID); Ultra Thin Buried Oxide (UTBOX); radiation effects;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241920
