Title :
High-power blue-violet laser diodes with improved beam divergence and high COD level
Author :
Ryu, H.Y. ; Ha, K.H. ; Lee, S.N. ; Choi, K.K. ; Chang, T.H. ; Son, J.K. ; Chae, J.H. ; Chae, S.H. ; Paek, H.S. ; Sung, Y.J. ; Sakong, T. ; Kim, H.G. ; Kim, K.-S. ; Kim, Y.H. ; Nam, O.H. ; Park, Y.J.
Author_Institution :
Samsung Avd. Inst. of Technol., South Korea
Abstract :
GaN-based laser diodes for 405 nm high-power applications are demonstrated. By decreasing the Al concentration of n-cladding layers, the vertical divergence angle was reduced to <18° and the average COD level was increase to >300 mW.
Keywords :
aluminium compounds; claddings; laser beams; semiconductor lasers; 405 nm; Al concentration; GaN; GaN-based laser diodes; beam divergence; blue-violet laser diodes; catastrophic optical damage level; high-power applications; high-power laser diodes; n-cladding layers; vertical divergence angle; Aluminum gallium nitride; Diode lasers; Gallium nitride; Laser beams; Light sources; Optical refraction; Optical superlattices; Optical variables control; Power generation; Refractive index;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548212
