DocumentCode :
2636229
Title :
Positive bias temperature instability induced positive charge generation in P+ Poly/SiON pMOSFET´s
Author :
Park, Hokyung ; Nicollian, Paul E. ; Reddy, Vijay
Author_Institution :
CMOS Dev. Reliability, Adv. CMOS Technol. Design & Integration, Texas Instrum. Inc., Dallas, TX, USA
fYear :
2012
fDate :
15-19 April 2012
Abstract :
We have investigated positive bias temperature instability characteristics in P+ Poly/SiON pMOSFET´s. Similar to NBTI, PBTI also shows positive charge generation. From the LV-SILC characteristics, we observed Dit generation at both the Poly/SiON and Si/SiON interfaces after PBTI stress, with Dit generation at the Poly/SiON interface influencing trap creation at the Si/SiON interface.
Keywords :
MOSFET; LV-SILC characteristics; NBTI; PBTI stress; SiON; pMOSFET; positive bias temperature instability; positive charge generation; Degradation; Hydrogen; Interface states; Logic gates; MOSFET circuits; Silicon; Stress; Donor Interface Trap; Hydrogen Release; Low-Voltage-Stress-Induced-Leakage-Current; Positive and Negative Bias Temperature Instability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2012.6241939
Filename :
6241939
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2636229
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