DocumentCode
2636294
Title
F-Band TRAPATT Diode Fundamental Mode Amplifier Circuits
Author
Mikenas, V.A.
fYear
1973
fDate
4-6 June 1973
Firstpage
175
Lastpage
177
Abstract
This paper describes some new circuit approaches and corresponding performance breakthroughs for F-Band TRAPATT diode circuits. Power outputs of up to 200 watts have been measured for fundamental mode operation at F-Band using alumina substrate circuits.
Keywords
Circuit optimization; Diodes; Distributed parameter circuits; Impedance; Microwave integrated circuits; Packaging; Power amplifiers; Power generation; Power transmission lines; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location
Boulder, CO, USA
Type
conf
DOI
10.1109/GMTT.1973.1123138
Filename
1123138
Link To Document