Title :
Intrinsic hot-carrier degradation of nMOSFETs by decoupling PBTI component in 28nm high-k/metal gate stacks
Author :
Hsu, Nathan Hui-Hsin ; You, Jian-Wen ; Ma, Huan-Chi ; Lee, Shih-Ching ; Chen, Eliot ; Huang, L.S. ; Yao-Chin Cheng ; Cheng, Yao-Chin ; Chen, I.C.
Author_Institution :
Adv. Technol. Div. of Device, United Microelectron. Corp. Ltd. (UMC), Tainan, Taiwan
Abstract :
For the first time, a new decoupling method of PBTI component from hot-carrier (HC) stress is proposed. It is found that the HC degradation is contributed from both PBTI and intrinsic HC component. Using the power-law time exponent of Vt shift in PBTI and HC, the intrinsic HC degradation can be extracted. In addition, a physical model for HC degradation in high-k/metal gate (HK/MG) device has been suggested.
Keywords :
MOSFET; high-k dielectric thin films; hot carriers; HC stress; decoupling PBTI component; high-k-metal gate device; high-k-metal gate stacks; hot-carrier stress; intrinsic HC component; intrinsic HC degradation; intrinsic hot-carrier degradation; nMOSFET; power-law time exponent; Charge carrier processes; Degradation; High K dielectric materials; Hot carriers; Logic gates; MOSFETs; Stress; Intrinsic HC degradation; PBTI and HC degradation; high-k/metal gate device;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241943
