DocumentCode
2636795
Title
Power Transistor Amplifier Design Using Large-Signal S Parameters
Author
Webb, J.G. ; Chaffin, R.J.
fYear
1973
fDate
4-6 June 1973
Firstpage
239
Lastpage
241
Abstract
Large-signal S-parameters are used in the design of UHF power transistor amplifiers, yielding analytical means for calculating stability criteria and circuit impedances for the desired gain and output power. A 3.5 watt, 500 MHz amplifier designed using these methods is described.
Keywords
Circuits; Design methodology; Impedance matching; Impedance measurement; Power amplifiers; Power generation; Power measurement; Power transistors; Scattering parameters; Stability criteria;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location
Boulder, CO, USA
Type
conf
DOI
10.1109/GMTT.1973.1123169
Filename
1123169
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