Title :
X-Band Silicon Power Transistor
Author :
Yuan, Han-tzong ; Kruger, James B. ; Wu, You-Sun
Author_Institution :
Texas Instrum. Inc. Dallas, Dallas, TX, USA
Abstract :
A four cell silicon bipolar power transistor exhibiting 1.0 watts cw output power with 6 dB power gain and 30% collector efficiency at 8 GHz has been developed. The transistor has 1 μm metal contacts and 0.5 μm emitter width. Direct electron-beam slice writing was applied to define the fine geometries.
Keywords :
microwave power transistors; power bipolar transistors; X-band silicon power transistor; direct electron-beam slice writing; four cell silicon bipolar power transistor; frequency 8 GHz; gain 6 dB; power 1 W; Bipolar transistor circuits; Diodes; Frequency; Geometry; Laboratories; Microwave transistors; Packaging; Power generation; Power transistors; Silicon;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123285
