Title :
Die Attach Thermal Monitoring Of IGBT Devices
Author_Institution :
Catalunya Polytech. Univ., Barcelona
Abstract :
Die attach contribution to total thermal resistance can be a significant part of its final value. Material choice, bondline thickness, voiding and interface delamination are some of the key factors affecting attachment quality, while process variations may seriously impair the final heat transfer characteristics of finished devices. In this work, we introduce a fast method to monitor die attach interface in finished devices. The measurements are performed onto IGBT´s, although the method may be used on any bipolar device by correct choice of measurement setup
Keywords :
delamination; heat transfer; insulated gate bipolar transistors; microassembling; thermal resistance; IGBT devices; bondline thickness; die attach thermal monitoring; heat transfer; interface delamination; thermal impedance; thermal phase shift; thermal resistance; Frequency domain analysis; Frequency measurement; Impedance measurement; Insulated gate bipolar transistors; Microassembly; Monitoring; Testing; Thermal resistance; Time measurement; Voltage;
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
DOI :
10.1109/MIXDES.2006.1706613