Title :
150 GHz Band IMPATT Oscillators, Frequency Converters and Doublers
Author :
Ohmori, M. ; Hirayama, M. ; Ishibashi, T.
Author_Institution :
Musashino Electr. Commun. Lab., Nippon Telegraph & Telephone Public Corp., Musashino, Japan
Abstract :
Si p+-n-n+ IMPATT oscillators, GaAs frequency converters and doublers at 150 GHz band were developed. Oscillator output power was 85 mW at 161 GHz with 2.8 percent efficiency. DC incremental conversion loss was 5.5 dB with a Schottky-barrier mixer.
Keywords :
III-V semiconductors; IMPATT oscillators; elemental semiconductors; gallium arsenide; microwave frequency convertors; microwave mixers; silicon; DC incremental conversion loss; GaAs; IMPATT oscillators; Schottky-barrier mixer; Si; doublers; efficiency 2.8 percent; frequency 150 GHz; frequency 161 GHz; frequency converters; loss 5.5 dB; oscillator output power; power 85 mW; Circuit testing; Etching; Frequency conversion; Gallium arsenide; Millimeter wave communication; Millimeter wave technology; Oscillators; Power generation; Schottky diodes; Semiconductor diodes;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123339
