Title :
Characterization And Simulation Of Silicon Power Devices Up To Very High Temperatures
Author :
Borthen, P. ; Wachutka, G.
Author_Institution :
Munich Univ. of Technol.
Abstract :
We investigated and calibrated physically-based high-temperature device models on the basis of measurements and simulations of industrial power MOSFETs and non-punch through (NPT) 600V IGBTs (both from Infineon AG) in a temperature range from room temperature up to 750 K
Keywords :
insulated gate bipolar transistors; power MOSFET; power semiconductor devices; semiconductor device models; 600 V; 750 K; Infineon AG; NPT; high-temperature device models; high-temperature electrical measurements; model calibration; non-punch through IGBT; power MOSFET; silicon power devices; Bonding; Electric variables measurement; Insulated gate bipolar transistors; MOSFETs; Phase change materials; Power measurement; Predictive models; Silicon; Temperature distribution; Testing;
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
DOI :
10.1109/MIXDES.2006.1706655
