Title :
125 to 181 GHz fundamental-wave VCO chips in SiGe technology
Author :
Jahn, M. ; Aufinger, K. ; Meister, T.F. ; Stelzer, A.
Author_Institution :
Christian Doppler Lab. for Integrated Radar Sensors, Johannes Kepler Univ., Linz, Austria
Abstract :
This paper presents four signal-generation chips that comprise a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a divide-by-32 prescaler. The VCOs with contiguous tuning ranges cover almost the full waveguide band from 110 to 170GHz (D-band). The fastest VCO operates at up to 181GHz in combination with the prescaler. The VCOs run on 1.8V, draw ~35 mA, and achieve a single-sideband phase noise ranging from -92 to -82 dBc/Hz at 1MHz offset frequency. Power consumption of the high-speed frequency divider in the first prescaler stage is 70mW. The circuits are based on an Infineon SiGe technology, which features HBTs with an fmax of 340 GHz.
Keywords :
Ge-Si alloys; frequency dividers; millimetre wave oscillators; phase noise; prescalers; semiconductor materials; signal generators; voltage-controlled oscillators; D-band; HBT; SiGe; buffer; divide-by-32 prescaler; frequency 110 GHz to 170 GHz; frequency 125 GHz to 181 GHz; frequency 340 GHz; full waveguide band; fundamental-wave VCO chips; fundamental-wave voltage-controlled oscillator; high-speed frequency divider; power 70 mW; power consumption; signal-generation chips; single-sideband phase noise; voltage 1.8 V; Frequency conversion; Frequency measurement; Radio frequency; Silicon germanium; Tuning; Voltage-controlled oscillators; Heterojunction bipolar transistor (HBT); SiGe HBT; millimeter-wave integrated circuits; regenerative frequency divider; voltage-controlled oscillator;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242238