Title :
Monolithically integrated high performance digital variable gain amplifiers
Author :
Zhao, Yibing ; Hou, Bin ; Zhang, Shuyun
Author_Institution :
Analog Devices, Inc., Wilmington, MA, USA
Abstract :
In this paper, a new monolithically integrated, digitally-controlled variable gain amplifier (DVGA) is presented. The DVGA includes a gain block, a digital step attenuator (DSA), and a ¼ W driver amplifier, fabricated by using commercial GaAs BiFET process. This high performance, low cost DVGA operates from 100MHz to 4000MHz, with 0.5dB step and 31.5dB gain dynamic range. It shows the noise figure of 4dB, output IP3 of 41dBm, and 25dBm output power at 1dB gain compression (P1dB). The DVGA consumes total 175mA DC current with 5V power supply at room temperature.
Keywords :
III-V semiconductors; MMIC amplifiers; UHF amplifiers; VHF amplifiers; bipolar transistors; driver circuits; field effect transistors; gallium arsenide; microwave amplifiers; DSA; GaAs; commercial BiFET process; current 175 mA; digital step attenuator; driver amplifier; frequency 100 MHz to 4000 MHz; gain 0.5 dB; gain 1 dB; gain 31.5 dB; monolithically integrated DVGA; monolithically integrated, digitally-controlled variable gain amplifier; noise figure; noise figure 4 dB; power 0.25 W; temperature 293 K to 298 K; voltage 5 V; Attenuation; Attenuators; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Linearity; Noise figure; GaAs; HBT; VGA; amplifier; digital attenuator; monolithic; pHEMT;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242254
