Title :
Spontaneous vortice arrays formation in broad area vertical cavity semiconductor lasers
Author :
Scheuer, J. ; Orenstein, M.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
The patterns described here, consisted mainly of ordered arrays of optical vortices, and are shown to stem from the nonlinear induced mode-locking of transverse modes. Within the laser medium the field is consisting of arrays of vortex solitons. We examined experimentally the transverse intensity patterns emerging from a proton implanted, broad area (20 μm diameter) VCSELs with three 8 nm InGaAs wells, emitting at 0.95 μm. The near-field and the spectrally resolved near-field intensity patterns were examined at room temperature under CW operation
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser mode locking; laser transitions; optical solitons; quantum well lasers; surface emitting lasers; vortices; 0.95 mum; 20 micron; CW operation; InGaAs; InGaAs wells; MQW lasers; VCSELs; broad area; broad area vertical cavity semiconductor lasers; laser medium; nonlinear induced transverse laser mode-locking; optical vortices; ordered arrays; proton implanted; room temperature; spectrally resolved near-field intensity patterns; spontaneous vortice arrays formation; transverse intensity patterns emerging; vortex solitons; Charge carrier density; Gaussian processes; Laser mode locking; Laser modes; Nonlinear equations; Optical arrays; Polynomials; Propagation constant; Semiconductor laser arrays; Vertical cavity surface emitting lasers;
Conference_Titel :
Nonlinear Optics '98: Materials, Fundamentals and Applications Topical Meeting
Conference_Location :
Kauai, HI
Print_ISBN :
0-7803-4950-4
DOI :
10.1109/NLO.1998.710310