Title :
A high-dynamic range, broadband, RF transmit modulator IC
Author :
Balboni, Ed ; Sam, Benjamin ; Carbonari, Daryl ; Cowles, John
Author_Institution :
Analog Devices, Wilmington, MA, USA
Abstract :
This paper presents a high-dynamic range broadband transmit modulator IC. The modulator includes a Voltage to current converter, active mixer core, output current to voltage converter followed by an active differential to single ended converter. A high performance LO quadrature generator is also integrated. The modulator input bandwidth exceeds 700MHz and the RF and LO can operate from 400MHz to 6GHz. At 1GHz RF out, the modulator provides a +26dBm OIP3 with -160dBm/Hz output noise. Designed in 0.35um SiGe complementary bipolar on SOI, the 1.7mm × 1.8mm IC consumes 200mA from a 5V supply.
Keywords :
Ge-Si alloys; microwave integrated circuits; modulators; radio transmitters; silicon-on-insulator; LO quadrature generator; RF transmit modulator IC; SOI; SiGe; current 200 mA; frequency 400 MHz to 6 GHz; high-dynamic range broadband transmit modulator IC; single ended converter; size 0.35 mum; voltage 5 V; voltage to current converter; Amplitude modulation; Bandwidth; Baseband; Mixers; Radio frequency; Temperature measurement; Bipolar; High Linearity; Mixers; Modulator; Transmitter; Wideband;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242289
