Low voltage BiCMOS switched-current circuits

Author

Hamed, H.F.A. ; Khalil, A.H. ; Embabi, S.H.K. ; Salama, A.E.

Author_Institution

Dept. of Electr. Eng., El-Menia Univ., Egypt

fYear

1999

fDate

22-24 Nov. 1999

Firstpage

205

Lastpage

208

Abstract

A study of the advantages of using BiCMOS technology in the design of SI current memory cells is presented. A double sampling bilinear integrator based on BiCMOS current memory cell has been built. As an application for the BiCMOS integrator, a third order low pass elliptic filter has been designed. The simulation results show an accurate filter response for sampling frequencies up to 40 MHz, using a nominal 3 V power supply and the THD is -40 dB at i_in=0.5I_bias.

Keywords

BiCMOS memory circuits; circuit simulation; elliptic filters; harmonic distortion; integrated circuit design; integrated circuit modelling; integrating circuits; low-pass filters; low-power electronics; sampled data circuits; switched current circuits; 3 V; 40 MHz; BiCMOS current memory cell; BiCMOS integrator; BiCMOS technology; SI current memory cell design; THD; double sampling bilinear integrator; filter response; low voltage BiCMOS switched-current circuits; power supply; sampling frequencies; simulation; third order low pass elliptic filter design; BiCMOS integrated circuits; Bipolar transistors; Equations; Frequency; Low pass filters; Low voltage; MOSFETs; Sampling methods; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1999. ICM '99. The Eleventh International Conference on

Print_ISBN

0-7803-6643-3

Type

conf

DOI

10.1109/ICM.2000.884841

Filename

884841