The impact of narrow width effects on high frequency performance and noise in 35nm multi-finger n-MOSFETs

The impact of narrow width effects on high frequency performance parameters like f_T, f_MAX, and RF noise in 35nm multi-finger n-MOSFETs is investigated in this paper. Multi-OD devices with extremely narrow width and fixed finger number (N_F) reveal higher R_g and C_gg, which lead to the penalty in f_T, f_MAX, and NF_min. On the other hand, narrow-OD MOSFET with larger N_F can yield lower R_g and higher f_MAX. However, these narrow-OD devices even with lower R_g suffer lower f_T and higher NF_min. The mechanisms responsible for narrow width effects on f_T, f_MAX, and noise parameters will be addressed to provide an important guideline of MOSFET layout for RF circuits design using nanoscale CMOS technology.