Title :
Transient photoconductivity, density of tail states and doping effect in a-Si:H
Author :
Merazga, A. ; Belgacem, H. ; Main, C. ; Reynolds, S.
Author_Institution :
Inst. d´´Electron., Univ. Mohammed Khider, Biskra, Algeria
Abstract :
The transient photoconductivity (TPC) is studied in the pre-recombination time range on the basis of a multiple trapping (MT) model which uses a transient occupation function to account for simultaneous interactions of all the tail states with the conduction band. A direct inversion method for the extraction of the density of states (DOS) from the TPC data in amorphous semiconductors is derived. Application of this transient spectroscopy to n-type a-Si:H results in a very narrow band tail (0.014 eV width) around 0.16 eV below the mobility edge, leading to low DOS. This finding is in favour of the defect pool concept, and involves some doping effects at the donor level.
Keywords :
amorphous semiconductors; carrier mobility; conduction bands; electron traps; electronic density of states; elemental semiconductors; hole traps; hydrogen; photoconductivity; semiconductor doping; silicon; Si:H; TPC data; a-Si:H; amorphous semiconductors; defect pool concept; density of states; density of tail states; direct inversion method; donor level doping effects; doping effect; mobility edge; multiple trapping model; n-type a-Si:H; narrow band tail; pre-recombination time range; simultaneous tail state-conduction band interactions; transient occupation function; transient photoconductivity; transient spectroscopy; Amorphous materials; Amorphous semiconductors; Charge carrier density; Data mining; Doping; Fourier transforms; Photoconductivity; Semiconductor process modeling; Spectroscopy; Tail;
Conference_Titel :
Microelectronics, 1999. ICM '99. The Eleventh International Conference on
Print_ISBN :
0-7803-6643-3
DOI :
10.1109/ICM.2000.884855
