Title :
MOVPE Of AiGalnP/GalnP Heterostructures For Visible Quantum Well Lasers
Author :
Roentgen, P. ; Bona, G.L. ; Heuberger, W. ; Unger, P.
Author_Institution :
IBM Research Division, Zurich Research Laboratory, Ruschlikon, Switzerland
fDate :
29 Jul-2 Aug 1991
Keywords :
Diode lasers; Doping; Epitaxial growth; Epitaxial layers; Laboratories; Optical control; Optical design; Quantum well lasers;
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
DOI :
10.1109/LEOSST.1991.638932
