DocumentCode :
2642706
Title :
A broadband, millimeter wave, asymmetrical Marchand balun in 180 nm SiGe BiCMOS technology
Author :
Howard, Duane C. ; Cho, Choon Sik ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2012
fDate :
17-19 June 2012
Firstpage :
425
Lastpage :
428
Abstract :
A silicon-compatible, broadband, millimeter wave Marchand balun operating at a center frequency of 65 GHz is presented. This balun is asymmetrical and broadside-coupled and exhibits excellent performance over a 30-90 GHz frequency range. The gain imbalance is -1.6 dB at 30 GHz, and +0.6 dB at 90 GHz, with a phase imbalance of ± 5.2 degrees, respectively. The balun exhibits good insertion loss and isolation over the frequency range of interest. To the authors´ knowledge, this is the widest bandwidth millimeter wave balun reported to date.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; baluns; field effect MIMIC; BiCMOS technology; SiGe; asymmetrical Marchand balun; broadband balun; frequency 30 GHz to 90 GHz; insertion isolation; insertion loss; millimeter wave balun; phase imbalance; silicon-compatible balun; Bandwidth; Equations; Impedance matching; Insertion loss; Mathematical model; Microwave circuits; Millimeter wave technology; Baluns; Coupling circuits; Impedance matching; Millimeter wave propa;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
ISSN :
1529-2517
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2012.6242314
Filename :
6242314
Link To Document :
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