A broadband, millimeter wave, asymmetrical Marchand balun in 180 nm SiGe BiCMOS technology

Author

Howard, Duane C. ; Cho, Choon Sik ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2012

fDate

17-19 June 2012

Firstpage

425

Lastpage

428

Abstract

A silicon-compatible, broadband, millimeter wave Marchand balun operating at a center frequency of 65 GHz is presented. This balun is asymmetrical and broadside-coupled and exhibits excellent performance over a 30-90 GHz frequency range. The gain imbalance is -1.6 dB at 30 GHz, and +0.6 dB at 90 GHz, with a phase imbalance of ± 5.2 degrees, respectively. The balun exhibits good insertion loss and isolation over the frequency range of interest. To the authors´ knowledge, this is the widest bandwidth millimeter wave balun reported to date.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; field effect MIMIC; BiCMOS technology; SiGe; asymmetrical Marchand balun; broadband balun; frequency 30 GHz to 90 GHz; insertion isolation; insertion loss; millimeter wave balun; phase imbalance; silicon-compatible balun; Bandwidth; Equations; Impedance matching; Insertion loss; Mathematical model; Microwave circuits; Millimeter wave technology; Baluns; Coupling circuits; Impedance matching; Millimeter wave propa;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242314

Filename

6242314