Title :
Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
Author :
Müller, J. ; Yurchuk, E. ; Schlösser, T. ; Paul, J. ; Hoffmann, R. ; Müller, S. ; Martin, D. ; Slesazeck, S. ; Polakowski, P. ; Sundqvist, J. ; Czernohorsky, M. ; Seidel, K. ; Kücher, P. ; Boschke, R. ; Trentzsch, M. ; Gebauer, K. ; Schröder, U. ; Mikolaj
Author_Institution :
Fraunhofer Center Nanoelectronic Technol., Dresden, Germany
Abstract :
We report on the most aggressively scaled ferroelectric field effect transistor so far. These were successfully fabricated using ferroelectric Si:HfO2 in a 28 nm HKMG stack (TiN/Si:HfO2/SiO2/Si). For a ± 5 V program/erase operation with pulses as short as 20 ns, reliable threshold voltage shifts were observed resulting in a memory window of about 0.9 V. We further demonstrate endurance characteristics matching demands of current nonvolatile memories utilizing wear leveling. Low retention loss was observed and extrapolated 10-year data storage can be expected.
Keywords :
ferroelectricity; field effect transistors; hafnium compounds; random-access storage; silicon compounds; titanium compounds; HKMG; TiN-Si:HfO2-SiO2-Si; endurance characteristics; ferroelectric field effect transistor; ferroelectricity; memory window; nonvolatile data storage; nonvolatile memories; size 28 nm; threshold voltage; wear leveling; FETs; Hafnium compounds; Logic gates; Nonvolatile memory; Silicon; Switches; Voltage measurement; FeFET; HKMG; HfO2; NVM; ferroelectric;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242443
