Nonvolatile 32×32 crossbar atom switch block integrated on a 65-nm CMOS platform

A 32×32-crossbar complementary-atom-switch (CAS) block has been successfully integrated in a 65nm-node CMOS platform without degrading CMOS properties. The CAS connecting to two Cu lines at each edge is composed of a dual layered electrolyte of TiO₂/polymer, which prevents Cu oxidation during the fabrication of the switch and Cu BEOL. The reduction of Cu-surface roughness and the electric field concentration at the edge of Cu electrode enable a high I_on/I_off ratio and a low programming voltages of 1.8V with distribution as low as σ=0.2V.