Title :
Statistical simulation of high-frequency bipolar circuits
Author :
Schneider, W. ; Schroter, M. ; Kraus, W. ; Wittkopf, H.
Author_Institution :
Atmel Germany, Heilbronn
Abstract :
This paper describes a physics-based methodology for computationally efficient statistical modeling of high-frequency bipolar transistors along with its practical implementation into a production process design kit. Applications to statistical modeling, circuit simulation, and yield optimization are demonstrated for an opamp circuit. Experimental results are shown that verify the methodology
Keywords :
bipolar transistors; circuit simulation; operational amplifiers; semiconductor device models; statistical analysis; circuit simulation; high-frequency bipolar circuits; opamp circuit; physics-based methodology; production process design; statistical simulation; yield optimization; Circuit simulation; Computational modeling; Equations; Integrated circuit modeling; Phase change materials; Predictive models; Process design; Production; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition, 2007. DATE '07
Conference_Location :
Nice
Print_ISBN :
978-3-9810801-2-4
DOI :
10.1109/DATE.2007.364493
