DocumentCode :
2644479
Title :
III-VI Interfacial Compounds
Author :
Kobayashi, M. ; Menke, D.R. ; Gunshor, R.L. ; Li, D. ; Nakamura, Y. ; Otsuka, N.
Author_Institution :
School of Electrical Engineering, Purdue University
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
51
Lastpage :
52
Keywords :
Capacitance-voltage characteristics; Chemicals; Energy resolution; Gallium arsenide; Heterojunctions; III-V semiconductor materials; Plasmons; Shape; Superlattices; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638943
Filename :
638943
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2644479
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