DocumentCode :
2644659
Title :
Very Smooth AiGaAs/GaAs Quantum-wells Grown By Metalorganic Chemical Vapor Disposition
Author :
Dupuis, Russell D. ; Neff, James G. ; Pinzone, Christopher J.
Author_Institution :
NSF Science & Technology Research Center
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
53
Lastpage :
54
Keywords :
Chemicals; Epitaxial growth; Gallium arsenide; MOCVD; Microelectronics; Molecular beam epitaxial growth; Quantum well devices; Quantum wells; Substrates; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638944
Filename :
638944
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2644659
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